CVD tube furnace system are widely used in the preparation of silicon- based films, silicon nitride, alumina and other thin film materials for semiconductor devices
1200 degree CVD tube furnace system consists of tube furnace, flow meter and vacuum pump. The tubular furnace is PID temperature controlled by the precision temperature control meter, which can edit the multi-stage rising and cooling program, and has the function of overheating and breaking pairs protection. The flanges on both sides of the furnace tube are equipped with digital vacuum gauge and mechanical pressure gauge, which can be used to control the atmosphere in the furnace tube. At the same time, the CVD system of the tube furnace adopts high-definition true color touchscreen operation, simple and easy to use, even non-professionals can master the use of the instrument after simple training, which can greatly improve your experimental efficiency.
High temperature stability: The system can operate stably at temperatures up to 1200 ℃, meeting the demand for high temperature material preparation. This high temperature stability ensures the uniformity and consistency of the material under high temperature environment.
High heating efficiency: Using advanced heating elements and temperature control technology, it can quickly heat up and maintain a stable temperature distribution, improving the preparation efficiency.
High vacuum: equipped with high vacuum system can reach a very high vacuum (such as 10^-6Pa), effectively reduce the gas impurities in the reaction chamber, and provide a pure environment for the preparation of high-quality materials.
Accurate vacuum control: with automatic control function of upper and lower vacuum, it can accurately control the vacuum in the reaction chamber to ensure the stability and repeatability of the preparation process.
Multi-channel flow control: The system is equipped with a multi-channel gas flow control system, such as proton flow controller and float flow controller, which can achieve accurate measurement and control of a variety of gases.
Wide flow range: wide flow range (such as 0-500sccm), which can be flexibly adjusted according to specific needs to meet the requirements of different preparation processes.
Intelligent PID temperature control: The use of intelligent PID temperature control technology can achieve high precision temperature control to ensure the stability and repeatability of the preparation process.
High degree of automation: the whole system has a high degree of automation, which can reduce the influence of manual operation on the preparation process and improve the preparation efficiency and quality.
Tubular furnace body: made of high temperature resistant material, the interior is a long tubular structure, which is convenient for the flow of reaction gas and uniform heating.
Good sealing performance: Advanced technology such as KF fast flange sealing is adopted to ensure the tightness and air tightness of the system and prevent the influence of gas leakage on the preparation process.
Convenient operation: the design of the quick connection flange structure of the gas path improves the convenience of operation and reduces the difficulty and cost of operation.
Buying information:
If you are interested in our tube furnace CVD system, please contact us for more information and a quote.
• Contact number: +8615617875939
• Email: gordon@zztainuo.com
• Contact: Gordon Zhang
• Wechat: 15617875939
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Product name | 1200 degree CVD tube furnace system | ||
Product Model | CY-CVD1200-50-400-3TH-Q | CY-CVD1200-50-200*200-3TH-Q | |
CY-CVD1200-50-200*200*200-3TH-Q | CY-CVD1200-50-300*300-3TH-Q | ||
CY-CVD1200-50-300*300*300-3TH-Q | CY-CVD1200-50-200*N-NTH-Q | ||
Vacuum tube furnace | Furnace tube material | High purity quartz | |
Furnace tube diameter | 50mm (optional 60mm, 80mm, 100mm) | ||
Furnace tube length | 800mm 1200mm 1300mm(customizable) | ||
Heating area length | 200mm 300mm 400mm (customizable) | ||
Length of thermostatic zone | 200mm (customizable) | ||
Operating temperature | 0 ~ 1100℃ | ||
Temperature control accuracy | + / - 1 ℃ | ||
Temperature control mode | 30 or 50 segment program temperature control | ||
Display mode | LCD | ||
Sealing method | 304 stainless steel vacuum flange | ||
Flange connection | 1/4 inch ferrules fitting, KF16/25/40 fitting | ||
Vacuumable | 4.4 e-3 Pa | ||
Power supply | AC:220V 50/60Hz | ||
Gas supply system | Product model | CY-3Z | |
Gas channel | 3 channels (Number of channels can be customized) | ||
Measuring parts | Gas float flowmeter or mass flowmeter | ||
Measuring range | Channel A: 0 ~ 100SCCM H2 gas | Note: If other range or gas type is required, special indication is required when ordering. The flowmeter of corresponding gas type and range can be selected according to the specific requirements of customers. | |
B channel: 0 ~ 300SCCM N2 gas | |||
Channel C: 0 ~ 500SCCMArgas | |||
Measurement accuracy | Plus or minus 1.0% F.S | ||
Pipe pressure resistance | 3MPa | ||
Working pressure difference | 50 ~ 300KPa | ||
Connect the pipes | 304 stainless steel | ||
Control valve | 304 stainless steel needle valve | ||
Interface specifications | Air intakes and outlets are 1/4 "jacketed joints | ||
Power supply | AC:220V 50/60Hz | ||
Exhaust system | Vacuum pump | Rotary vane pump or molecular pump can be customized | |
Pumping rate | 1.1L/S or 600L/S | ||
Exhaust port | KF16 | ||
Vacuum measurement | Resistance gauge (customizable) | ||
Limit vacuum | 1.0 e-1 Pa | ||
Power supply | AC:220V 50/60Hz | ||
Air extraction interface | KF16 |
Main parts:
Part name | Part description |
Equipment host | One tube furnace |
Water cooler | One |
Front pump | Optional |
Molecular pump set | Optional |
Random accessories | A set |
User manual | A copy |
1. Semiconductor manufacturing
In the semiconductor industry, CVD systems are widely used in the preparation of silicon- based films, silicon nitride, alumina and other thin film materials for semiconductor devices. These films play a key role in the manufacturing process of semiconductor devices, affecting the performance and stability of the devices.
2 Optoelectronics
CVD systems are also used to prepare optical thin films, fiber optic coatings, and solar cell materials. In the field of optoelectronics, these thin film materials are essential for improving the performance and efficiency of optical devices.
3 Materials science
The field of materials science utilizes CVD systems to prepare various coatings, ceramic films and coating materials. These materials have a wide range of application prospects in aerospace, energy, chemical and other fields.
4. Nanotechnology
In the field of nanotechnology, CVD systems are used to prepare nanomaterials, nanostructured films, etc. These nanomaterials have unique physical and chemical properties and show great application potential in electronics, information, biology, medicine and other fields.
5. Surface engineering
CVD systems can also be used to change substrate surface properties, such as increasing wettability, corrosion resistance, etc. This is of great significance for improving the performance and life of the material in a specific environment.
6 Other areas
In addition to the above fields, CVD system is also widely used in high-temperature atmosphere sintering, atmosphere reduction and other experimental processes. In universities, scientific research institutes and industrial and mining enterprises, CVD system is also an important tool for material research and development.
Application Case Introduction to the process of preparing graphene film coating using 1200 degree tube furnace CVD System
1. Preparation stage
Material preparation: Select asuitable metal base, such as copper (Cu), nickel (Ni), etc., which acts as both a growth base and a catalyst during the CVD growth of graphene.
Prepare carbon source gases such as methane (CH₄), ethanol,etc. These are the source of carbon atoms that form graphene.
Prepare a protective gas such as hydrogen (H₂), argon (Ar), or nitrogen (N₂) to protect the metal substrate from oxidation during heating and cooling.
Equipment inspection: Make sure the 1200 degree tube furnace CVD system is in good working order, including the gas supply system, tube furnace, air extraction system, etc.
Check that the vacuum system is able to reach the required vacuum degree, usually requiring a limit vacuum of 10^-3 Pa or higher.
2 Heat and grow phases
Loading base: Place the cleaned metal base into the tube furnace and secure it in place.
Vacuum and heating: Close the inlet valve and outlet valve of the tube furnace, start the vacuum pump to extract the air in the furnace until the required vacuum degree is reached.
Heat the tube furnace to a predetermined temperature, usually around 1000 。C, and keep it for a period of time to stabilize the temperature. This process may require a protective gas to prevent oxidation of the metal substrate.
Carbon source gas: When the temperature in the furnace is stable, stop the protection gas and change to carbon source gas, such as methane. The source gas will crack at high temperatures, and the resulting carbon atoms will nucleate and grow into graphene films on the surface of the metal substrate.
Growth process: After the carbon source gas is passed through, the reaction will continue for a period of time, depending on the thickness and quality of the graphene film required. During this process, the carbon atoms dissolve, diffuse and grow into a graphene film on the surface of the metal substrate.
3 Cool down and remove stage
Cutoff carbon source gas: After the growth process is complete, cutoff the supply of carbon source gas.
Through the protective gas cooling: change the protective gas (such as hydrogen, argon or nitrogen), and turn on the cooling system of the tube furnace, so that the temperature in the furnace is gradually reduced to room temperature. The role of the protective gas is to prevent the oxidation of the metal substrate and the graphene film during the cooling process.
Remove the sample: When the temperature in the furnace has dropped to room temperature, open the furnace door of the tube furnace and remove the sample of the graphene film coating on the metal substrate.
4 Followup treatment
Washand dry: The sample is cleaned to remove impurities and residue from the surface, and dried.
Detection and characterization: The morphology, structure and quality of the graphene film coating are detected and characterized by microscopes, Raman spectrometers and other equipment.
Matters needing attention
During the whole preparation process, parameters such as temperature, gas flow, reaction time and so on need to be strictly controlled to ensure the quality and performance of the graphene film coating.
Attention should be paid to safety during the preparation process to avoid harm to personnel and equipment by risk factors such as high temperature and high pressure.
After the preparation, the equipment should be cleaned and maintained in time to extend the service life of the equipment and keep the equipment in good working condition.
The above is the basic process flow of preparing graphene film coating using 1200 degree tube furnace CVD system. It should be noted that the specific process parameters and steps may vary depending on the type of equipment, type of material and preparation requirements. Therefore, in the actual operation should be adjusted and optimized according to the specific situation.
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